Piezoelectric aluminum nitride thin films for microelectromechanical systems
نویسندگان
چکیده
منابع مشابه
Integrated Aluminum Nitride Piezoelectric Microelectromechanical System for Radio Front Ends
This article summarizes the most recent technological developments in the realization of integrated aluminum nitride (AlN) piezoelectric microelectromechanical system (MEMS) for radio frequency (rf) front ends to be employed in next generation wireless communication devices. The AlN-based resonator and switch technologies are presented, their principle of operation explained, and some key exper...
متن کاملCharging effect of aluminum nitride thin films containing Al nanocrystals.
In this work, the Al-rich AIN thin film is deposited on Si substrate by radio frequency (RF) sputtering to form a metal-insulator-semiconductor (MIS) structure. Al nanocrystals (nc-Al) are formed and embedded in the AIN thin film. Charge trapping/detrapping in the nc-Al leads to a shift in the flat-band voltage (VFB) of the MIS structure. The charge storage ability of the AIN thin films contain...
متن کاملAluminum Nitride Piezoelectric Micromachined Ultrasound Transducer Arrays
Air-coupled piezoelectric micromachined ultrasound transducer arrays, operating at ~190 kHz, have been fabricated utilizing an aluminum nitride piezoelectric layer. Improved fabrication processes have reduced the frequency variation seen in our previous work with single transducers resulting in arrays of transducers with resonant frequencies (fn) that match within the fractional half-power band...
متن کاملDesign of Piezoelectric Aluminum Nitride MEMS Resonator
The following work reports the design, numerical, analytical and simulation characterization of an Aluminum Nitride MEMS resonator. The paper offers a comparison of rectangular plate MEMS resonator (length extensional and width extensional mode shapes) and ring shape MEMS resonator. It also demonstrates the contour Eigen modes of resonators and their equivalent electric circuit model (BVD). Fur...
متن کاملPreparation and Characterization of Aluminum Nitride Thin Films with the Potential Application in Electro-Acoustic Devices
In this work, aluminum nitride (AlN) thin films with different thicknesses were deposited on quartz and silicon substrates using single ion beam sputtering technique. The physical and chemical properties of prepared films were investigated by different characterization technique. X-ray diffraction (XRD) spectra revealed that all of the deposited films have an amorphous str...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: MRS Bulletin
سال: 2012
ISSN: 0883-7694,1938-1425
DOI: 10.1557/mrs.2012.268